Plasma nitridation of Nb wiring sidewalls to improve annealing stability
- Author
- SHIOTA, T; IMAMURA, T; HASUO, S
Fujitsu Laboratories Ltd, Morinosato-Wakamiya, Atsugi 243-01, Japan - Source
Applied physics letters. 1992, Vol 60, Num 24, pp 3051-3053 ; ref : 4 ref
- CODEN
- APPLAB
- ISSN
- 0003-6951
- Scientific domain
- Crystallography; Electronics; Optics; Condensed state physics
- Publisher
- American Institute of Physics, Melville, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Caractéristique électrique Courant critique Dispositif supraconducteur quantique Dépendance Epaisseur Interconnexion Jonction Josephson Niobium Nitruration Recuit thermique Température
- Keyword (en)
- Electrical characteristic Critical current Superconducting quantum interferometer device Dependence Thickness Interconnection Josephson junction Niobium Nitriding Thermal annealing Temperature
- Keyword (es)
- Característica eléctrica Corriente crítica Dispositivo supraconductor cuántico Dependencia Espesor Interconección Unión Josephson Niobio Nitruración Recocido térmico Temperatura
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F11 Superconducting devices
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 5385059
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1063/1.106753 
https://dx.doi.org/10.1063/1.106753
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