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Platinum-silicide formation during rapid thermal annealing : dependence on substrate orientation and pre-implanted impurities

Author
GAIDUK, P. I; LARSEN, A. N
Univ. Aarhus, inst. physics, Aarhus 8000, Denmark
Source

Applied physics. A, Solids and surfaces. 1991, Vol 53, Num 2, pp 168-171 ; ref : 16 ref

CODEN
APSFDB
ISSN
0721-7250
Scientific domain
Electronics; Condensed state physics
Publisher
Springer, Berlin / Springer, Heidelberg / Springer, New York, NY
Publication country
Germany
Document type
Article
Language
English
Keyword (fr)
Arsenic Coefficient diffusion Composé minéral Couche mince Diffusion chimique Epaisseur Etude expérimentale Germanium Implantation ion Impureté Krypton Orientation cristalline Platine Siliciure Recuit thermique rapide Silicium Support Temps Zone flottante Métal transition Composé
Keyword (en)
Arsenic Diffusion coefficient Inorganic compound Thin film Chemical diffusion Thickness Experimental study Germanium Ion implantation Impurity Krypton Crystal orientation Platinum Silicides Rapid thermal annealing Silicon Support Time Floating zone Transition metal Compounds
Keyword (es)
Arsénico Coeficiente difusión Compuesto inorgánico Capa fina Difusión química Espesor Estudio experimental Germanio Implantación ión Impureza Kriptón Orientación cristalina Platino Siliciuro Recocido térmico rápido Silicio Soporte Tiempo Zona flotante Metal transición Compuesto
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H35 Solid surfaces and solid-solid interfaces / 001B60H35J Surface and interface dynamics and vibrations

Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H55 Thin film structure and morphology

Discipline
Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
5388640

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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