Acceptor compensation in silicon induced by chemomechanical polishing
- Author
- PRIGGE, H; GERLACH, P; HAHN, P. O; SCHNEGG, A; JACOB, H
Wacker-Chemitronic GmbH, Burghausen, Germany - Source
Journal of the Electrochemical Society. 1991, Vol 138, Num 5, pp 1385-1389 ; ref : 13 ref
- CODEN
- JESOAN
- ISSN
- 0013-4651
- Scientific domain
- General chemistry, physical chemistry; Crystallography; Electrical engineering; Condensed state physics
- Publisher
- Electrochemical Society, Pennington, NJ
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Compensation Cuivre Passivation Polissage Propriété électrique Résistivité électrique Semiconducteur type p Silicium Spectrométrie
- Keyword (en)
- Compensation Copper Passivation Polishing Electrical properties Electric resistivity P type semiconductor Silicon Spectrometry
- Keyword (es)
- Compensación Cobre Pasivación Pulimiento Propiedad eléctrica Resistividad eléctrica Semiconductor tipo p Silicio Espectrometría
- Classification
- Pascal
- 001 Exact sciences and technology / 001C Chemistry / 001C01 General and physical chemistry / 001C01H Electrochemistry
- Discipline
- General chemistry and physical chemistry
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 5403573
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1149/1.2085791 
https://dx.doi.org/10.1149/1.2085791
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