A study of the use of ultraviolet-ozone cleaning for reduction of the defect density on molecular beam epitaxy grown GaAs wafers
- Author
- KOPF, R. F; KINSELLA, A. P; EBERT, C. W
AT&T Bell Laboratories, Murray Hill NJ 07974, United States - Source
Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1991, Vol 9, Num 1, pp 132-135 ; ref : 16 ref
- CODEN
- JVTBD9
- ISSN
- 0734-211X
- Scientific domain
- Electronics; Computer science
- Publisher
- American Institute of Physics, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Attaque chimique Epitaxie Etude expérimentale Faisceau moléculaire Gallium Arséniure Irradiation UV Nettoyage Ozone
- Keyword (en)
- Chemical etching Epitaxy Experimental study Molecular beam Gallium Arsenides Ultraviolet irradiation Cleaning Ozone
- Keyword (es)
- Ataque químico Epitaxia Estudio experimental Haz molecular Galio Arseniuro Irradiación UV Limpieza Ozono
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 5414588
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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