Effect of employing positions of thermal cyclic annealing and strained-layer superlattice on defect reduction in GaAs-on-Si
- Author
- HAYAFUJI, N; MIYASHITA, M; NISHIMURA, T; KADOIWA, K; KUMABE, H; MUROTANI, T
Mitsubishi Electric Corp., optoelectronic microwave devices R&D lab., Itami, Hyogo 664, Japan - Source
Japanese journal of applied physics. 1990, Vol 29, Num 11, pp 2371-2375 ; 1 ; ref : 15 ref
- CODEN
- JJAPA5
- ISSN
- 0021-4922
- Scientific domain
- Crystallography; Optics; Condensed state physics; Physics; Plasma physics
- Publisher
- Japanese journal of applied physics, Tokyo
- Publication country
- Japan
- Document type
- Article
- Language
- English
- Keyword (fr)
- Densité dislocation Dépôt chimique phase vapeur Gallium Arséniure Recuit thermique Silicium Superréseau
- Keyword (en)
- Dislocation density Chemical vapor deposition Gallium Arsenides Thermal annealing Silicon Superlattice
- Keyword (es)
- Densidad dislocación Depósito químico fase vapor Galio Arseniuro Recocido térmico Silicio Superred
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A72 Defects and impurities in crystals; microstructure
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 5421744
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1143/JJAP.29.2371 
https://dx.doi.org/10.1143/JJAP.29.2371
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