Photoelectric properties in microscopic p-n junctions of organic semiconductors
- Author
- SAITO, K; SUGI, M
Electrotech. lab., Tsukuba-shi, Ibaraki 305, Japan - Source
Applied physics letters. 1992, Vol 61, Num 1, pp 116-118 ; ref : 10 ref
- CODEN
- APPLAB
- ISSN
- 0003-6951
- Scientific domain
- Crystallography; Electronics; Optics; Condensed state physics
- Publisher
- American Institute of Physics, Melville, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Composé amphiphile Conducteur organique Dispositif photoélectrique Fabrication microélectronique Jonction p n Méthode Langmuir Blodgett Photodiode Réponse transitoire Semiconducteur Icosanoïque acide
- Keyword (en)
- Amphiphilic compound Organic conductor Photoelectric cell Microelectronic fabrication p n junction Langmuir Blodgett method Photodiode Transient response Semiconductor materials
- Keyword (es)
- Compuesto anfifílico Conductor orgánico Dispositivo fotoeléctrico Fabricación microeléctrica Unión p n Método Langmuir Blodgett Fotodiodo Respuesta transitoria Semiconductor(material)
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F15 Optoelectronic devices
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 5443931
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1063/1.107658 
https://dx.doi.org/10.1063/1.107658
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