A summary review of displacement damage from high energy radiation in silicon semiconductors and semiconductor devices
- Author
- MESSENGER, G. C
- Source
IEEE transactions on nuclear science. 1992, Vol 39, Num 3, pp 468-473 ; 2 ; ref : 20 ref
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Article synthèse Dispositif semiconducteur Détérioration par rayonnement Propriété électronique Silicium
- Keyword (en)
- Review Semiconductor device Radiation damage Electronic properties Silicon
- Keyword (es)
- Artículo síntesis Dispositivo semiconductor Deteriorización por irradiación Propiedad electrónica Silicio
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F22 Miscellaneous
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 5448298
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/23.277547 
https://dx.doi.org/10.1109/23.277547
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