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Oxidation effects on cleaved multiple quantum well surfaces in air observed by scanning probe microscopy

Author
HOWELLS, S; GALLAGHER, M. J; CHEN, T; PAX, P; SARID, D
Univ. Arizona, optical sci. cent., Tucson AZ 85721, United States
Source

Applied physics letters. 1992, Vol 61, Num 7, pp 801-803 ; ref : 7 ref

CODEN
APPLAB
ISSN
0003-6951
Scientific domain
Crystallography; Electronics; Optics; Condensed state physics
Publisher
American Institute of Physics, Melville, NY
Publication country
United States
Document type
Article
Language
English
Keyword (fr)
Composé minéral Couche mince Etude expérimentale Gallium Indium Arséniure Mixte Indium Phosphure Microscopie force atomique Microscopie tunnel balayage Oxydation Puits quantique multiple Semiconducteur Surface
Keyword (en)
Inorganic compound Thin film Experimental study Gallium Indium Arsenides Mixed Indium Phosphides Atomic force microscopy Scanning tunneling microscopy Oxidation Multiple quantum well Semiconductor materials Surface
Keyword (es)
Compuesto inorgánico Capa fina Estudio experimental Galio Indio Arseniuro Mixto Indio Fosfuro Microscopía fuerza atómica Microscopía túnel barrido Oxidación Pozo cuántico múltiple Semiconductor(material) Superficie
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H65 Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties

Discipline
Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
5461673

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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