Oxide wearout phenomena of ultrathin SiO2 film during high-field stress
- Author
- FUKUDA, H; YASUDA, M; IWABUCHI, T
Oki Electric Industry Co. & Ltd., semiconductor technology lab., Tokyo 193, Japan - Source
Electronics Letters. 1992, Vol 28, Num 16, pp 1516-1518 ; ref : 13 ref
- CODEN
- ELLEAK
- ISSN
- 0013-5194
- Scientific domain
- Electronics; Optics; Telecommunications
- Publisher
- Institution of Electrical Engineers, London
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Keyword (fr)
- Barrière potentiel Calcul numérique Capacité MOS Caractéristique courant tension Champ intense Couche mince Diode tunnel Dégradation Hauteur barrière Mesure Silicium Structure MOS
- Keyword (en)
- Potential barrier Numerical computation MOS capacity Voltage current curve High field Thin film Tunnel diode Degradation Barrier height Measurement Silicon MOS structure
- Keyword (es)
- Barrera potencial Cálculo numérico Capacidad MOS Característica corriente tensión Campo intenso Capa fina Diodo túnel Degradación Altura barrera Medida Silicio Estructura MOS
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F02 Compound structure devices
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 5462863
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1049/el:19920963 
https://dx.doi.org/10.1049/el:19920963
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