Parasitic conduction current in the passivation ledge of AlGaAs/GaAs heterojunction bipolar transistors
- Author
- LIU, W; HARRIS, J. S
Stanford univ., solid state lab., Stanford CA 94305, United States - Source
Solid-state electronics. 1992, Vol 35, Num 7, pp 891-895 ; ref : 10 ref
- ISSN
- 0038-1101
- Scientific domain
- Electronics
- Publisher
- Elsevier Science, Oxford
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Keyword (fr)
- Aluminium Gallium Arséniure Mixte Composé III-V Conductivité électrique Etude théorique Gallium Arséniure Passivation Transistor hétérojonction Phénomène parasite Transistor bipolaire
- Keyword (en)
- Aluminium Gallium Arsenides Mixed III-V compound Electrical conductivity Theoretical study Gallium Arsenides Passivation Heterojunction transistor Parasitic phenomena Bipolar transistor
- Keyword (es)
- Aluminio Galio Arseniuro Mixto Compuesto III-V Conductividad eléctrica Estudio teórico Galio Arseniuro Pasivación Transistor heterounión
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 5468751
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/0038-1101(92)90315-4 
https://dx.doi.org/10.1016/0038-1101(92)90315-4
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