Effect of diffusion smearing of boundaries of subgate depletion region within framework of quasi-two-dimensional model
- Author
- BARYBIN, A. A; PEREPELOVSKIY, V. V
- Source
Telecommunications & radio engineering. 1991, Vol 46, Num 11, pp 117-119 ; ref : 2 ref
- CODEN
- TCREAG
- ISSN
- 0040-2508
- Scientific domain
- Electronics; Telecommunications
- Publisher
- Begell House, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Barrière Schottky Diffusion électron Déplétion Limite Modèle 2 dimensions Transistor effet champ barrière Schottky
- Keyword (en)
- Schottky barrier Electron scattering Depletion Limit Two dimensional model Metal semiconductor field effect transistor
- Keyword (es)
- Barrera Schottky Difusión electrón Depleción Límite Modelo 2 dimensiones Transistor efecto campo barrera Schottky
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 5468812
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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