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Effect of diffusion smearing of boundaries of subgate depletion region within framework of quasi-two-dimensional model

Author
BARYBIN, A. A; PEREPELOVSKIY, V. V
Source

Telecommunications & radio engineering. 1991, Vol 46, Num 11, pp 117-119 ; ref : 2 ref

CODEN
TCREAG
ISSN
0040-2508
Scientific domain
Electronics; Telecommunications
Publisher
Begell House, New York, NY
Publication country
United States
Document type
Article
Language
English
Keyword (fr)
Barrière Schottky Diffusion électron Déplétion Limite Modèle 2 dimensions Transistor effet champ barrière Schottky
Keyword (en)
Schottky barrier Electron scattering Depletion Limit Two dimensional model Metal semiconductor field effect transistor
Keyword (es)
Barrera Schottky Difusión electrón Depleción Límite Modelo 2 dimensiones Transistor efecto campo barrera Schottky
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
5468812

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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