Partially ionized beam deposition of 2-methyl-4-nitroaniline thin films
- Author
- NASON, T. C; MCDONALD, J. F; LU, T.-M
Rensselaer polytech. inst., cent. integrated electronics, physics dep., Troy NY 12180, United States - Source
Journal of applied physics. 1991, Vol 70, Num 11, pp 6766-6773 ; ref : 32 ref
- CODEN
- JAPIAU
- ISSN
- 0021-8979
- Scientific domain
- Crystallography; Electronics; Optics; Condensed state physics; Physics
- Publisher
- American Institute of Physics, Woodbury, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Argent Basse température Couche mince Cuivre Diffraction RX Harmonique 2 Laser YAG Laser solide Matériau non linéaire Microscopie électronique balayage Microstructure Néodyme Polycristal Propriété optique Silicium 2-Méthyle-4-nitroaniline Dépôt couche mince Dépôt faisceau partiellement ionisé
- Keyword (en)
- Silver Low temperature Thin film Copper X ray diffraction Second harmonic YAG laser Solid state laser Non linear material Scanning electron microscopy Microstructure Neodymium Polycrystal Optical properties Silicon
- Keyword (es)
- Plata Baja temperatura Capa fina Cobre Difracción RX Harmónico 2 Laser YAG Laser sólido Material no lineal Microscopía electrónica barrido Microestructura Neodimio Policristal Propiedad óptica Silicio
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 5474330
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Access to the document
Install on your browser
DOI
10.1063/1.349851 
https://dx.doi.org/10.1063/1.349851
"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:16:\"10.1063\/1.349851\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:71:\"Partially ionized beam deposition of 2-methyl-4-nitroaniline thin films\";s:9:\"\u0000*\u0000jtitle\";s:26:\"Journal of applied physics\";s:9:\"\u0000*\u0000stitle\";s:13:\"J. appl. phys\";s:7:\"\u0000*\u0000date\";s:4:\"1991\";s:9:\"\u0000*\u0000volume\";s:2:\"70\";s:8:\"\u0000*\u0000issue\";s:2:\"11\";s:8:\"\u0000*\u0000spage\";s:4:\"6766\";s:8:\"\u0000*\u0000epage\";s:4:\"6773\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0021-8979\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"NASON\";s:10:\"\u0000*\u0000aufirst\";s:4:\"T. C\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:2:{i:0;s:14:\"MCDONALD, J. F\";i:1;s:8:\"LU, T.-M\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JAPIAU\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:71:\"Partially ionized beam deposition of 2-methyl-4-nitroaniline thin films\";s:8:\"\u0000*\u0000place\";s:12:\"Woodbury, NY\";s:6:\"\u0000*\u0000pub\";s:29:\"American Institute of Physics\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Panist access
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:16:\"10.1063\/1.349851\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:71:\"Partially ionized beam deposition of 2-methyl-4-nitroaniline thin films\";s:9:\"\u0000*\u0000jtitle\";s:26:\"Journal of applied physics\";s:9:\"\u0000*\u0000stitle\";s:13:\"J. appl. phys\";s:7:\"\u0000*\u0000date\";s:4:\"1991\";s:9:\"\u0000*\u0000volume\";s:2:\"70\";s:8:\"\u0000*\u0000issue\";s:2:\"11\";s:8:\"\u0000*\u0000spage\";s:4:\"6766\";s:8:\"\u0000*\u0000epage\";s:4:\"6773\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0021-8979\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"NASON\";s:10:\"\u0000*\u0000aufirst\";s:4:\"T. C\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:2:{i:0;s:14:\"MCDONALD, J. F\";i:1;s:8:\"LU, T.-M\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JAPIAU\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:71:\"Partially ionized beam deposition of 2-methyl-4-nitroaniline thin films\";s:8:\"\u0000*\u0000place\";s:12:\"Woodbury, NY\";s:6:\"\u0000*\u0000pub\";s:29:\"American Institute of Physics\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Istex access
"O:16:\"UnpaywallOpenUrl\":35:{s:8:\"\u0000*\u0000email\";s:27:\"assistance-portail@inist.fr\";s:6:\"\u0000*\u0000fmt\";N;s:6:\"\u0000*\u0000doi\";s:16:\"10.1063\/1.349851\";s:6:\"\u0000*\u0000pii\";N;s:7:\"\u0000*\u0000pmid\";N;s:9:\"\u0000*\u0000atitle\";N;s:9:\"\u0000*\u0000jtitle\";N;s:9:\"\u0000*\u0000stitle\";N;s:7:\"\u0000*\u0000date\";N;s:9:\"\u0000*\u0000volume\";N;s:8:\"\u0000*\u0000issue\";N;s:8:\"\u0000*\u0000spage\";N;s:8:\"\u0000*\u0000epage\";N;s:8:\"\u0000*\u0000pages\";N;s:7:\"\u0000*\u0000issn\";N;s:8:\"\u0000*\u0000eissn\";N;s:9:\"\u0000*\u0000aulast\";N;s:10:\"\u0000*\u0000aufirst\";N;s:9:\"\u0000*\u0000auinit\";N;s:10:\"\u0000*\u0000auinitm\";N;s:5:\"\u0000*\u0000au\";N;s:9:\"\u0000*\u0000aucorp\";N;s:7:\"\u0000*\u0000isbn\";N;s:8:\"\u0000*\u0000coden\";N;s:8:\"\u0000*\u0000genre\";N;s:7:\"\u0000*\u0000part\";N;s:9:\"\u0000*\u0000btitle\";N;s:8:\"\u0000*\u0000title\";N;s:8:\"\u0000*\u0000place\";N;s:6:\"\u0000*\u0000pub\";N;s:10:\"\u0000*\u0000edition\";N;s:9:\"\u0000*\u0000tpages\";N;s:9:\"\u0000*\u0000series\";N;s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";N;}"
Unpaywall access
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:16:\"10.1063\/1.349851\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:71:\"Partially ionized beam deposition of 2-methyl-4-nitroaniline thin films\";s:9:\"\u0000*\u0000jtitle\";s:26:\"Journal of applied physics\";s:9:\"\u0000*\u0000stitle\";s:13:\"J. appl. phys\";s:7:\"\u0000*\u0000date\";s:4:\"1991\";s:9:\"\u0000*\u0000volume\";s:2:\"70\";s:8:\"\u0000*\u0000issue\";s:2:\"11\";s:8:\"\u0000*\u0000spage\";s:4:\"6766\";s:8:\"\u0000*\u0000epage\";s:4:\"6773\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0021-8979\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"NASON\";s:10:\"\u0000*\u0000aufirst\";s:4:\"T. C\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:2:{i:0;s:14:\"MCDONALD, J. F\";i:1;s:8:\"LU, T.-M\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JAPIAU\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:71:\"Partially ionized beam deposition of 2-methyl-4-nitroaniline thin films\";s:8:\"\u0000*\u0000place\";s:12:\"Woodbury, NY\";s:6:\"\u0000*\u0000pub\";s:29:\"American Institute of Physics\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Europe PubMed Central access
"O:11:\"BaseOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:16:\"10.1063\/1.349851\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:71:\"Partially ionized beam deposition of 2-methyl-4-nitroaniline thin films\";s:9:\"\u0000*\u0000jtitle\";s:26:\"Journal of applied physics\";s:9:\"\u0000*\u0000stitle\";s:13:\"J. appl. phys\";s:7:\"\u0000*\u0000date\";s:4:\"1991\";s:9:\"\u0000*\u0000volume\";s:2:\"70\";s:8:\"\u0000*\u0000issue\";s:2:\"11\";s:8:\"\u0000*\u0000spage\";s:4:\"6766\";s:8:\"\u0000*\u0000epage\";s:4:\"6773\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0021-8979\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"NASON\";s:10:\"\u0000*\u0000aufirst\";s:4:\"T. C\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:2:{i:0;s:14:\"MCDONALD, J. F\";i:1;s:8:\"LU, T.-M\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JAPIAU\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:71:\"Partially ionized beam deposition of 2-methyl-4-nitroaniline thin films\";s:8:\"\u0000*\u0000place\";s:12:\"Woodbury, NY\";s:6:\"\u0000*\u0000pub\";s:29:\"American Institute of Physics\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Base Search access
"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:16:\"10.1063\/1.349851\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:71:\"Partially ionized beam deposition of 2-methyl-4-nitroaniline thin films\";s:9:\"\u0000*\u0000jtitle\";s:26:\"Journal of applied physics\";s:9:\"\u0000*\u0000stitle\";s:13:\"J. appl. phys\";s:7:\"\u0000*\u0000date\";s:4:\"1991\";s:9:\"\u0000*\u0000volume\";s:2:\"70\";s:8:\"\u0000*\u0000issue\";s:2:\"11\";s:8:\"\u0000*\u0000spage\";s:4:\"6766\";s:8:\"\u0000*\u0000epage\";s:4:\"6773\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0021-8979\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"NASON\";s:10:\"\u0000*\u0000aufirst\";s:4:\"T. C\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:2:{i:0;s:14:\"MCDONALD, J. F\";i:1;s:8:\"LU, T.-M\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JAPIAU\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:71:\"Partially ionized beam deposition of 2-methyl-4-nitroaniline thin films\";s:8:\"\u0000*\u0000place\";s:12:\"Woodbury, NY\";s:6:\"\u0000*\u0000pub\";s:29:\"American Institute of Physics\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
arXiv access
