Poly-oxide/poly-Si/SiO2/Si structure for ellipsometry measurement
- Author
- CHAO, T. S; LEE, C. L; LEI, T. F; YEN, Y. T
National Chiao Tung univ., inst. electronics, dep. electronics eng., Taiwan, Taiwan, Province of China - Source
Electronics Letters. 1992, Vol 28, Num 12, pp 1144-1145 ; ref : 10 ref
- CODEN
- ELLEAK
- ISSN
- 0013-5194
- Scientific domain
- Electronics; Optics; Telecommunications
- Publisher
- Institution of Electrical Engineers, London
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Keyword (fr)
- Ellipsométrie Méthode mesure Oxyde Polycristal Silicium
- Keyword (en)
- Ellipsometry Measurement method Oxides Polycrystal Silicon
- Keyword (es)
- Elipsometría Método medida Óxido Policristal Silicio
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B00 General / 001B00G Instruments, apparatus, components and techniques common to several branches of physics and astronomy / 001B00G60 Optical instruments, equipment and techniques / 001B00G60F Polarimeters and ellipsometers
- Discipline
- Metrology
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 5480683
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1049/el:19920722 
https://dx.doi.org/10.1049/el:19920722
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