Process dependence of the SiO2/Si(100)interface trap density of ultrathin SiO2 films
- Author
- FUKUDA, H1 ; YASUDA, M; IWABUCHI, T; KANEKO, S; UENO, T; OHDOMARI, I
[1] Oki Electric Industry Co., Ltd, semiconductor technology lab., Hachioji-shi, Tokyo 193, Japan - Source
Journal of applied physics. 1992, Vol 72, Num 5, pp 1906-1911 ; ref : 34 ref
- CODEN
- JAPIAU
- ISSN
- 0021-8979
- Scientific domain
- Crystallography; Electronics; Optics; Condensed state physics; Physics
- Publisher
- American Institute of Physics, Woodbury, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Atmosphère contrôlée Bande interdite Composé minéral Couche mince Couche oxyde Diélectrique Epaisseur Etude expérimentale Interface solide solide Liaison chimique Liaison disponible Niveau défaut Oxydation Passivation Piégeage porteur charge Recuit thermique Semiconducteur Silicium Oxyde Silicium Structure MOS Variation temporelle
- Keyword (en)
- Controlled atmosphere Energy gap Inorganic compound Thin film Oxide layer Dielectric materials Thickness Experimental study Solid solid interface Chemical bond Dangling bond Defect level Oxidation Passivation Charge carrier trapping Thermal annealing Semiconductor materials Silicon Oxides Silicon MOS structure Time variation
- Keyword (es)
- Atmósfera controlada Banda prohibida Compuesto inorgánico Capa fina Capa óxido Dieléctrico Espesor Estudio experimental Interfase sólido sólido Enlace químico Enlace disponible Oxidación Pasivación Captura portador carga Recocido térmico Semiconductor(material) Silicio Óxido Silicio Estructura MOS Variación temporal
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C20 Surface and interface electron states
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 5495800
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1063/1.351665 
https://dx.doi.org/10.1063/1.351665
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