Effect of dead space on gain and noise of double-carrier-multiplication avalanche photodiodes
- Author
- HAYAT, M. M1 ; SALEH, B. E. A; TEICH, M. C
[1] Univ. Wisconsin, dep. electrical computer eng., Madison WI 53706-1691, United States - Source
I.E.E.E. transactions on electron devices. 1992, Vol 39, Num 3, pp 546-552 ; ref : 18 ref
- CODEN
- IETDAI
- ISSN
- 0018-9383
- Scientific domain
- Electronics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Bruit Diode avalanche Dispositif optoélectronique Espace mort Gain Multiplication Photodiode
- Keyword (en)
- Noise Avalanche diode Optoelectronic device Dead space Gain Multiplication Photodiode
- Keyword (es)
- Ruido Diodo avalancha Dispositivo optoelectrónico Espacio muerto Ganancia Multiplicación Fotodiodo
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F15 Optoelectronic devices
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 5499589
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/16.123476 
https://dx.doi.org/10.1109/16.123476
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