Overhauser-shift measurements on Si :P near the metal-insulator transition
- Author
- DYAKONOV, V; DENNINGER, G
Univ. Bayreuth, physikalisches Inst., Exprimentalphysik II, 8580 Bayreuth, Germany - Source
Physical review. B, Condensed matter. 1992, Vol 46, Num 8, pp 5008-5011 ; ref : 16 ref
- CODEN
- PRBMDO
- ISSN
- 0163-1829
- Scientific domain
- Crystallography; Metallurgy, welding; Condensed state physics
- Publisher
- American Institute of Physics, Woodbury, NY
/
American Physical Society, Woodbury, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Centre donneur Effet Overhauser Electron conduction Etude expérimentale Impureté Phosphore Relaxation spin réseau Résonance magnétique nucléaire Semiconducteur Silicium
- Keyword (en)
- Donor center Overhauser effect Conduction electron Experimental study Impurity Phosphorus Spin lattice relaxation Nuclear magnetic resonance Semiconductor materials Silicon
- Keyword (es)
- Centro dador Efecto Overhauser Electrón conducción Estudio experimental Impureza Fósforo Relajación spin red Resonancia magnética nuclear Semiconductor(material) Silicio
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70F Magnetic resonances and relaxations in condensed matter, mössbauer effect / 001B70F60 Nuclear magnetic resonance and relaxation / 001B70F60E Relaxation effects
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 5499847
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Access to the document
Install on your browser
DOI
10.1103/PhysRevB.46.5008 
https://dx.doi.org/10.1103/PhysRevB.46.5008
"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:24:\"10.1103\/PhysRevB.46.5008\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:74:\"Overhauser-shift measurements on Si :P near the metal-insulator transition\";s:9:\"\u0000*\u0000jtitle\";s:36:\"Physical review. B, Condensed matter\";s:9:\"\u0000*\u0000stitle\";s:30:\"Phys. rev., B, Condens. matter\";s:7:\"\u0000*\u0000date\";s:4:\"1992\";s:9:\"\u0000*\u0000volume\";s:2:\"46\";s:8:\"\u0000*\u0000issue\";s:1:\"8\";s:8:\"\u0000*\u0000spage\";s:4:\"5008\";s:8:\"\u0000*\u0000epage\";s:4:\"5011\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0163-1829\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:8:\"DYAKONOV\";s:10:\"\u0000*\u0000aufirst\";s:1:\"V\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:1:{i:0;s:12:\"DENNINGER, G\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"PRBMDO\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:74:\"Overhauser-shift measurements on Si :P near the metal-insulator transition\";s:8:\"\u0000*\u0000place\";s:12:\"Woodbury, NY\";s:6:\"\u0000*\u0000pub\";s:29:\"American Institute of Physics\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Panist access
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:24:\"10.1103\/PhysRevB.46.5008\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:74:\"Overhauser-shift measurements on Si :P near the metal-insulator transition\";s:9:\"\u0000*\u0000jtitle\";s:36:\"Physical review. B, Condensed matter\";s:9:\"\u0000*\u0000stitle\";s:30:\"Phys. rev., B, Condens. matter\";s:7:\"\u0000*\u0000date\";s:4:\"1992\";s:9:\"\u0000*\u0000volume\";s:2:\"46\";s:8:\"\u0000*\u0000issue\";s:1:\"8\";s:8:\"\u0000*\u0000spage\";s:4:\"5008\";s:8:\"\u0000*\u0000epage\";s:4:\"5011\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0163-1829\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:8:\"DYAKONOV\";s:10:\"\u0000*\u0000aufirst\";s:1:\"V\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:1:{i:0;s:12:\"DENNINGER, G\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"PRBMDO\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:74:\"Overhauser-shift measurements on Si :P near the metal-insulator transition\";s:8:\"\u0000*\u0000place\";s:12:\"Woodbury, NY\";s:6:\"\u0000*\u0000pub\";s:29:\"American Institute of Physics\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Istex access
"O:16:\"UnpaywallOpenUrl\":35:{s:8:\"\u0000*\u0000email\";s:27:\"assistance-portail@inist.fr\";s:6:\"\u0000*\u0000fmt\";N;s:6:\"\u0000*\u0000doi\";s:24:\"10.1103\/PhysRevB.46.5008\";s:6:\"\u0000*\u0000pii\";N;s:7:\"\u0000*\u0000pmid\";N;s:9:\"\u0000*\u0000atitle\";N;s:9:\"\u0000*\u0000jtitle\";N;s:9:\"\u0000*\u0000stitle\";N;s:7:\"\u0000*\u0000date\";N;s:9:\"\u0000*\u0000volume\";N;s:8:\"\u0000*\u0000issue\";N;s:8:\"\u0000*\u0000spage\";N;s:8:\"\u0000*\u0000epage\";N;s:8:\"\u0000*\u0000pages\";N;s:7:\"\u0000*\u0000issn\";N;s:8:\"\u0000*\u0000eissn\";N;s:9:\"\u0000*\u0000aulast\";N;s:10:\"\u0000*\u0000aufirst\";N;s:9:\"\u0000*\u0000auinit\";N;s:10:\"\u0000*\u0000auinitm\";N;s:5:\"\u0000*\u0000au\";N;s:9:\"\u0000*\u0000aucorp\";N;s:7:\"\u0000*\u0000isbn\";N;s:8:\"\u0000*\u0000coden\";N;s:8:\"\u0000*\u0000genre\";N;s:7:\"\u0000*\u0000part\";N;s:9:\"\u0000*\u0000btitle\";N;s:8:\"\u0000*\u0000title\";N;s:8:\"\u0000*\u0000place\";N;s:6:\"\u0000*\u0000pub\";N;s:10:\"\u0000*\u0000edition\";N;s:9:\"\u0000*\u0000tpages\";N;s:9:\"\u0000*\u0000series\";N;s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";N;}"
Unpaywall access
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:24:\"10.1103\/PhysRevB.46.5008\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:74:\"Overhauser-shift measurements on Si :P near the metal-insulator transition\";s:9:\"\u0000*\u0000jtitle\";s:36:\"Physical review. B, Condensed matter\";s:9:\"\u0000*\u0000stitle\";s:30:\"Phys. rev., B, Condens. matter\";s:7:\"\u0000*\u0000date\";s:4:\"1992\";s:9:\"\u0000*\u0000volume\";s:2:\"46\";s:8:\"\u0000*\u0000issue\";s:1:\"8\";s:8:\"\u0000*\u0000spage\";s:4:\"5008\";s:8:\"\u0000*\u0000epage\";s:4:\"5011\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0163-1829\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:8:\"DYAKONOV\";s:10:\"\u0000*\u0000aufirst\";s:1:\"V\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:1:{i:0;s:12:\"DENNINGER, G\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"PRBMDO\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:74:\"Overhauser-shift measurements on Si :P near the metal-insulator transition\";s:8:\"\u0000*\u0000place\";s:12:\"Woodbury, NY\";s:6:\"\u0000*\u0000pub\";s:29:\"American Institute of Physics\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Europe PubMed Central access
"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:24:\"10.1103\/PhysRevB.46.5008\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:74:\"Overhauser-shift measurements on Si :P near the metal-insulator transition\";s:9:\"\u0000*\u0000jtitle\";s:36:\"Physical review. B, Condensed matter\";s:9:\"\u0000*\u0000stitle\";s:30:\"Phys. rev., B, Condens. matter\";s:7:\"\u0000*\u0000date\";s:4:\"1992\";s:9:\"\u0000*\u0000volume\";s:2:\"46\";s:8:\"\u0000*\u0000issue\";s:1:\"8\";s:8:\"\u0000*\u0000spage\";s:4:\"5008\";s:8:\"\u0000*\u0000epage\";s:4:\"5011\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0163-1829\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:8:\"DYAKONOV\";s:10:\"\u0000*\u0000aufirst\";s:1:\"V\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:1:{i:0;s:12:\"DENNINGER, G\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"PRBMDO\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:74:\"Overhauser-shift measurements on Si :P near the metal-insulator transition\";s:8:\"\u0000*\u0000place\";s:12:\"Woodbury, NY\";s:6:\"\u0000*\u0000pub\";s:29:\"American Institute of Physics\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
arXiv access
