Oxide-nitride storage dielectrics on smooth and rough polycrystalline silicon layers
- Author
- FAZAN, P. C1 ; DITALI, A; MATHEWS, V; CHAN, H. C; RHODES, H. E; LIU, Y. C; DENNISON, C. H
[1] Micron Technology Inc., Boise ID 83706, United States - Source
Applied physics letters. 1991, Vol 59, Num 3, pp 345-347 ; ref : 13 ref
- CODEN
- APPLAB
- ISSN
- 0003-6951
- Scientific domain
- Crystallography; Electronics; Optics; Condensed state physics
- Publisher
- American Institute of Physics, Melville, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Condensateur Couche mince Courant fuite Diélectrique Durée vie Fabrication Mémoire Oxyde Nitrure Polycristal Silicium Mémoire dynamique accès aléatoire
- Keyword (en)
- Capacitor Thin film Leakage current Dielectric materials Lifetime Manufacturing Memory Oxides Nitrides Polycrystal Silicon
- Keyword (es)
- Condensador Capa fina Corriente escape Dieléctrico Tiempo vida Fabricación Memoria Óxido Nitruro Policristal Silicio
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 5511298
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1063/1.105591 
https://dx.doi.org/10.1063/1.105591
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