Postdeposition process for improving optical properties of chemical-vapor-deposited silicon
- Author
- GOELA, J. S; TAYLOR, R. L
Morton International, Inc./CVD Incorporated, Woburn MA 01801, United States - Source
Journal of the American Ceramic Society. 1992, Vol 75, Num 8, pp 2134-2138 ; ref : 13 ref
- CODEN
- JACTAW
- ISSN
- 0002-7820
- Scientific domain
- Chemical industry parachemical industry
- Publisher
- Blackwell, Malden,MA
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Absorption IR Dépôt chimique phase vapeur Etude expérimentale Microstructure Polycristal Procédé dépôt Recuit thermique Semiconducteur Silicium Transmission optique
- Keyword (en)
- Infrared absorption Chemical vapor deposition Experimental study Microstructure Polycrystal Deposition process Thermal annealing Semiconductor materials Silicon Optical transmission
- Keyword (es)
- Absorción IR Depósito químico fase vapor Estudio experimental Microestructura Policristal Procedimiento revestimiento Recocido térmico Semiconductor(material) Silicio Transmisión óptica
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H20 Optical properties of bulk materials and thin films / 001B70H20C Optical constants: refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 5516353
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1111/j.1151-2916.1992.tb04475.x 
https://dx.doi.org/10.1111/j.1151-2916.1992.tb04475.x
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