Optimal second-order small-signal model for long- and short-channel three-terminal MOSFET/MODFET wave equation
- Author
- SUNG CHOON KANG; ROBLIN, P
Ohio state univ., dep. electrical eng., Columbus OH 43210-2572, United States - Source
I.E.E.E. transactions on electron devices. 1992, Vol 39, Num 8, pp 1909-1915 ; ref : 13 ref
- CODEN
- IETDAI
- ISSN
- 0018-9383
- Scientific domain
- Electronics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Développement série Equation onde Modélisation Régime signal faible Schéma équivalent Synthèse circuit Transistor MOS Transistor effet champ Transistor mobilité électron élevée Ordre 4
- Keyword (en)
- Series expansion Wave equation Modeling Small signal behavior Equivalent circuit Circuit synthesis MOS transistor Field effect transistor High electron mobility transistor
- Keyword (es)
- Desarrollo serie Ecuación onda Modelización Régimen señal débil Esquema equivalente Síntesis circuito Transistor MOS Transistor efecto campo Transistor movibilidad elevada electrones
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 5516517
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/16.144683 
https://dx.doi.org/10.1109/16.144683
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