Effect of cathode spacer layer on the current-voltage characteristics of resonant tunneling diodes
- Author
- MOUNAIX, P; VANBESIEN, O; LIPPENS, D
CNRS Univ. sci. techn. Lille flandres artoris, cent. hyperfréquences semiconducteurs, Villeneuve Ascq 59655, France - Source
Applied physics letters. 1990, Vol 57, Num 15, pp 1517-1519 ; ref : 10 ref
- CODEN
- APPLAB
- ISSN
- 0003-6951
- Scientific domain
- Crystallography; Electronics; Optics; Condensed state physics
- Publisher
- American Institute of Physics, Melville, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Aluminium Gallium Arséniure Mixte Bande conduction Caractéristique courant tension Diode tunnel Etude expérimentale Gallium Arséniure Hétérojonction double Modélisation
- Keyword (en)
- Aluminium Gallium Arsenides Mixed Conduction band Voltage current curve Tunnel diode Experimental study Gallium Arsenides Double heterojunction Modeling
- Keyword (es)
- Aluminio Galio Arseniuro Mixto Banda conducción Característica corriente tensión Diodo túnel Estudio experimental Galio Arseniuro Heterounión doble Modelización
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 5520101
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1063/1.103381 
https://dx.doi.org/10.1063/1.103381
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