Effect of base doping gradients on the electrical performance of AIGaAs/GaAs heterojunction bipolar transistors
- Author
- NOOR MOHAMMAD, S; CHEN, J; CHYI, J.-I; MORKOC, H
Univ. Illinois at Urbana-Champaign, coordinated sci. lab. materials res. lab., Urbana IL 61801, United States - Source
Applied physics letters. 1990, Vol 57, Num 5, pp 463-465 ; ref : 13 ref
- CODEN
- APPLAB
- ISSN
- 0003-6951
- Scientific domain
- Crystallography; Electronics; Optics; Condensed state physics
- Publisher
- American Institute of Physics, Melville, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Aluminium Gallium Arséniure Mixte Caractéristique courant tension Dopage Etude expérimentale Gain courant Gallium Arséniure Gradient concentration Transistor hétérojonction
- Keyword (en)
- Aluminium Gallium Arsenides Mixed Voltage current curve Doping Experimental study Current gain Gallium Arsenides Concentration gradient Heterojunction transistor
- Keyword (es)
- Aluminio Galio Arseniuro Mixto Característica corriente tensión Doping Estudio experimental Ganancia corriente Galio Arseniuro Gradiente concentración Transistor heterounión
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 5520199
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1063/1.103667 
https://dx.doi.org/10.1063/1.103667
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