Thermal conductivity and interface thermal resistance of Si film on Si substrate determined by photothermal displacement interferometry
- Author
- KUO, B. S. W1 ; LI, J. C. M; SCHMID, A. W
[1] Univ. Rochester, dep. mechanical eng., Rochester NY 14627, United States - Source
Applied physics. A, Solids and surfaces. 1992, Vol 55, Num 3, pp 289-296 ; ref : 32 ref
- CODEN
- APSFDB
- ISSN
- 0721-7250
- Scientific domain
- Electronics; Condensed state physics
- Publisher
- Springer, Berlin
/
Springer, Heidelberg
/
Springer, New York, NY
- Publication country
- Germany
- Document type
- Article
- Language
- English
- Keyword (fr)
- Conductivité thermique Couche mince Etude expérimentale Méthode mesure Résistance thermique contact Silicium Spectrométrie optothermique
- Keyword (en)
- Thermal conductivity Thin film Experimental study Measurement method Contact thermal resistance Silicon Optothermal spectrometry
- Keyword (es)
- Conductividad térmica Capa fina Estudio experimental Método medida Resistencia térmica contacto Silicio Espectrometría optotérmica
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B00 General / 001B00G Instruments, apparatus, components and techniques common to several branches of physics and astronomy / 001B00G20 Thermal instruments, apparatus and techniques
- Discipline
- Metrology
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 5522759
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1007/BF00348399 
https://dx.doi.org/10.1007/BF00348399
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