Kinetics of surfaces reactions in very low-pressure chemical vapor deposition of Si from SiH4
- Author
- GATES, S. M1 ; KULKARNI, S. K
[1] IBM, T. J. Watson res. cent., Yorktown Heights NY 10598, United States - Source
Applied physics letters. 1991, Vol 58, Num 25, pp 2963-2965 ; ref : 16 ref
- CODEN
- APPLAB
- ISSN
- 0003-6951
- Scientific domain
- Crystallography; Electronics; Optics; Condensed state physics
- Publisher
- American Institute of Physics, Melville, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Adsorption Basse pression Dépôt chimique phase vapeur Film Modèle cinétique Méthode mesure Semiconducteur Silicium Hydrure Silicium Température
- Keyword (en)
- Adsorption Low pressure Chemical vapor deposition Film Kinetic model Measurement method Semiconductor materials Silicon Hydrides Silicon Temperature
- Keyword (es)
- Adsorción Baja presión Depósito químico fase vapor Película Modelo cinético Método medida Semiconductor(material) Silicio Hidruro Silicio Temperatura
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 5528628
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1063/1.104709 
https://dx.doi.org/10.1063/1.104709
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