Oxidation property of silicon small particles
- Author
- OKADA, R; IIJIMA, S
Hitachi Ltd, mechanical eng. res. lab., Tsuchiura, Ibaraki 300, Japan - Source
Applied physics letters. 1991, Vol 58, Num 15, pp 1662-1663 ; ref : 6 ref
- CODEN
- APPLAB
- ISSN
- 0003-6951
- Scientific domain
- Crystallography; Electronics; Optics; Condensed state physics
- Publisher
- American Institute of Physics, Melville, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Diamètre Evaporation Méthode mesure Oxydation Silicium Oxyde Silicium
- Keyword (en)
- Diameter Evaporation Measurement method Oxidation Silicon Oxides Silicon
- Keyword (es)
- Diámetro Evaporación Método medida Oxidación Silicio Óxido Silicio
- Classification
- Pascal
- 001 Exact sciences and technology / 001C Chemistry / 001C01 General and physical chemistry / 001C01H Electrochemistry
- Discipline
- General chemistry and physical chemistry
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 5528877
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1063/1.105129 
https://dx.doi.org/10.1063/1.105129
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