Threshold shifting in pseudomorphic semiconductor-insulator-semiconductor heterostructure field-effect transistors
- Autor
- WRIGHT, S. L; SOLOMON, P. M; BARATTE, H; LATULIPE, D. C; JACKSON, T. N
IBM, Watson res. cent., Yorktown Heights NY 10598, United States - Fuente
Applied physics letters. 1991, Vol 58, Num 20, pp 2285-2287 ; ref : 14 ref
- CODEN
- APPLAB
- ISSN
- 0003-6951
- Campo Científico
- Crystallography; Electronics; Optics; Condensed state physics
- Editor
- American Institute of Physics, Melville, NY
- País de la publicación
- United States
- Tipo de documento
- Article
- Idioma
- English
- Palabra clave (fr)
- Bande conduction Conductivité Densité courant Gallium Arséniure Semiconducteur Transistor effet champ
- Palabra clave (in)
- Conduction band Conductivity Current density Gallium Arsenides Semiconductor materials Field effect transistor
- Palabra clave (es)
- Banda conducción Conductividad Densidad corriente Galio Arseniuro Semiconductor(material) Transistor efecto campo
- Clasificación
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70B Electronic transport in condensed matter / 001B70B20 Conductivity phenomena in semiconductors and insulators
- Disciplina
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Procedencia
- Inist-CNRS
- Base de datos
- PASCAL
- Identificador INIST
- 5529063
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1063/1.104900 
https://dx.doi.org/10.1063/1.104900
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