Photostimulated evaporation of SiO2 films by synchrotron radiation
- Author
- AKAZAWA, H; UTSUMI, Y; TAKAHASHI, J; URISU, T
NTT LSI Laboratories, Atsugi-shi, Kanagawa, Japan - Source
Applied physics letters. 1990, Vol 57, Num 22, pp 2302-2304 ; ref : 12 ref
- CODEN
- APPLAB
- ISSN
- 0003-6951
- Scientific domain
- Crystallography; Electronics; Optics; Condensed state physics
- Publisher
- American Institute of Physics, Melville, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Couche Evaporation Interface Rayonnement synchrotron Silicium Oxyde Silicium Stimulation
- Keyword (en)
- Layer Evaporation Interface Synchrotron radiation Silicon Oxides Silicon Stimulation
- Keyword (es)
- Capa Evaporación Interfase Radiación sincrotrón Silicio Óxido Silicio Estimulación
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 5529178
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1063/1.104167 
https://dx.doi.org/10.1063/1.104167
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