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50-nm self-aligned-gate pseudomorphic AlInAs/GaInAs high electron mobility transistors

Author
NGUYEN, L. D; BROWN, A. S; THOMPSON, M. A; JELLOIAN, L. M
Hughes res. laboratories, Malibu CA 90265, United States
Source

I.E.E.E. transactions on electron devices. 1992, Vol 39, Num 9, pp 2007-2014 ; ref : 27 ref

CODEN
IETDAI
ISSN
0018-9383
Scientific domain
Electronics
Publisher
Institute of Electrical and Electronics Engineers, New York, NY
Publication country
United States
Document type
Article
Language
English
Keyword (fr)
Aluminium Indium Arséniure Mixte Conception Dispositif semiconducteur Fréquence coupure Gain courant Gallium Indium Arséniure Mixte Mobilité électron Photoluminescence Technologie autoalignée Transconductance Transistor effet champ Transistor mobilité électron élevée Transistor pseudomorphique
Keyword (en)
Aluminium Indium Arsenides Mixed Design Semiconductor device Cut off frequency Current gain Gallium Indium Arsenides Mixed Electron mobility Photoluminescence Self aligned technology Transconductance Field effect transistor High electron mobility transistor Pseudomorphic transistor
Keyword (es)
Aluminio Indio Arseniuro Mixto Diseño Dispositivo semiconductor Frecuencia corte Ganancia corriente Galio Indio Arseniuro Mixto Movilidad electrón Fotoluminiscencia Tecnología rejilla autoalineada Transconductancia Transistor efecto campo Transistor movibilidad elevada electrones
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
5534747

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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