50-nm self-aligned-gate pseudomorphic AlInAs/GaInAs high electron mobility transistors
- Author
- NGUYEN, L. D; BROWN, A. S; THOMPSON, M. A; JELLOIAN, L. M
Hughes res. laboratories, Malibu CA 90265, United States - Source
I.E.E.E. transactions on electron devices. 1992, Vol 39, Num 9, pp 2007-2014 ; ref : 27 ref
- CODEN
- IETDAI
- ISSN
- 0018-9383
- Scientific domain
- Electronics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Aluminium Indium Arséniure Mixte Conception Dispositif semiconducteur Fréquence coupure Gain courant Gallium Indium Arséniure Mixte Mobilité électron Photoluminescence Technologie autoalignée Transconductance Transistor effet champ Transistor mobilité électron élevée Transistor pseudomorphique
- Keyword (en)
- Aluminium Indium Arsenides Mixed Design Semiconductor device Cut off frequency Current gain Gallium Indium Arsenides Mixed Electron mobility Photoluminescence Self aligned technology Transconductance Field effect transistor High electron mobility transistor Pseudomorphic transistor
- Keyword (es)
- Aluminio Indio Arseniuro Mixto Diseño Dispositivo semiconductor Frecuencia corte Ganancia corriente Galio Indio Arseniuro Mixto Movilidad electrón Fotoluminiscencia Tecnología rejilla autoalineada Transconductancia Transistor efecto campo Transistor movibilidad elevada electrones
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 5534747
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/16.155871 
https://dx.doi.org/10.1109/16.155871
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