Possibilities of X-ray interference diffractometry for the investigation of ion-doped layers
- Author
- ARISTOV, V. V; MORDKOVICH, V. N; NIKULIN, A. YU; SNIGIREV, A. A; WINTER, U; EROKHIN, YU. N; ZAUMSEIL, P
Acad. sci. USSR, inst. microelectronics technology high purity materials, Chernogolovka 142432, Ussr - Source
Physica status solidi. A. Applied research. 1990, Vol 120, Num 1, pp K1-K5 ; ref : 6 ref
- CODEN
- PSSABA
- ISSN
- 0031-8965
- Scientific domain
- Crystallography; Electronics; Metallurgy, welding; Condensed state physics
- Publisher
- Wiley-VCH, Berlin
- Publication country
- Germany
- Document type
- Article
- Language
- English
- Keyword (fr)
- Diffractométrie RX Diffusion en diffraction Défaut Etude expérimentale Implantation ion Recuit thermique Silicium Spectre
- Keyword (en)
- X ray diffractometry Diffuse scattering Defect Experimental study Ion implantation Thermal annealing Silicon Spectrum
- Keyword (es)
- Difractometría RX Difusión en difracción Defecto Estudio experimental Implantación ión Recocido térmico Silicio Espectro
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 5538072
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1002/pssa.2211200127 
https://dx.doi.org/10.1002/pssa.2211200127
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