A study of the collector-emitter offset voltage of InAlAs/InGaAs and AlGaAs/GaAs heterojunction bipolar transistors
- Author
- LIOU, J. J
Univ. cent. Florida, electrical eng. dep., Oelando FL 32816, United States - Source
Semiconductor science and technology. 1990, Vol 5, Num 4, pp 355-357 ; ref : 8 ref
- CODEN
- SSTEET
- ISSN
- 0268-1242
- Scientific domain
- Electronics; Optics; Condensed state physics
- Publisher
- Institute of Physics, Bristol
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Keyword (fr)
- Caractéristique courant tension Performance Tension électrique Transistor hétérojonction
- Keyword (en)
- Voltage current curve Performance Voltage Heterojunction transistor
- Keyword (es)
- Característica corriente tensión Rendimiento Voltaje Transistor heterounión
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 5538150
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1088/0268-1242/5/4/015 
https://dx.doi.org/10.1088/0268-1242/5/4/015
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