One-dimensional subband effects in the conductance of multiple quantum wires in Si metal-oxide-semiconductor field-effect transistors
- Author
- GAO, J. R; DE GRAAF, C; CARO, J; RADELAAR, S; OFFENBERG, M; LAUER, V; SINGLETON, J; JANSSEN, T. J. B. M; PERENBOOM, J. A. A. J
Delft univ. technology, Delft inst. microelectronics submicron technology, Delft 2628 DJ, Netherlands - Source
Physical review. B, Condensed matter. 1990, Vol 41, Num 17 ; 12 315-12 318 ; ref : 15 ref
- CODEN
- PRBMDO
- ISSN
- 0163-1829
- Scientific domain
- Crystallography; Metallurgy, welding; Condensed state physics
- Publisher
- American Institute of Physics, Woodbury, NY
/
American Physical Society, Woodbury, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Champ magnétique Fil quantique Silicium Transistor MOS Transistor effet champ Transport électrique
- Keyword (en)
- Magnetic field Quantum wire Silicon MOS transistor Field effect transistor
- Keyword (es)
- Campo magnético Hilo cuántico Silicio Transistor MOS Transistor efecto campo
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 5539714
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1103/PhysRevB.41.12315 
https://dx.doi.org/10.1103/PhysRevB.41.12315
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