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A study of polycrystalline Cd(Zn, Mn)Te/CdS films and interfaces

Author
RINGEL, S. A; SUDHARSANAN, R; ROHATGI, A; CARTER, W. B
Georgia inst. technology, microelectronics res. cent., Atlanta GA 30332, United States
Source

Journal of electronic materials. 1990, Vol 19, Num 3, pp 259-263 ; ref : 14 ref

CODEN
JECMA5
ISSN
0361-5235
Scientific domain
Crystallography; Electronics; Metallurgy, welding; Condensed state physics
Publisher
Institute of Electrical and Electronics Engineers, New York, NY
Publication country
United States
Document type
Article
Language
English
Keyword (fr)
Caractérisation Composé organométallique Dépôt chimique phase vapeur Epitaxie Fabrication microélectronique Faisceau moléculaire Cadmium Zinc Tellure Mixte
Keyword (en)
Characterization Organometallic compound Chemical vapor deposition Epitaxy Microelectronic fabrication Molecular beam
Keyword (es)
Caracterización Compuesto organometálico Depósito químico fase vapor Epitaxia Fabricación microeléctrica Haz molecular
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A10 Methods of crystal growth; physics of crystal growth

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices

Discipline
Electronics Physics and materials science
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
5540489

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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