Activation efficiencies for a standard qualification implant in GaAS annealed by a rapid thermal process
- Author
- CRIST, J. O; LOOK, D. C
Wright res. development cent., electronic technology lab., OH 45433-6543, United States - Source
Journal of electronic materials. 1990, Vol 19, Num 8, pp 773-776 ; ref : 8 ref
- CODEN
- JECMA5
- ISSN
- 0361-5235
- Scientific domain
- Crystallography; Electronics; Metallurgy, welding; Condensed state physics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Activation Effet Hall Etude expérimentale Gallium Arséniure Implantation ion Recuit thermique
- Keyword (en)
- Activation Hall effect Experimental study Gallium Arsenides Ion implantation Thermal annealing
- Keyword (es)
- Activación Efecto Hall Estudio experimental Galio Arseniuro Implantación ión Recocido térmico
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A30 Phase diagrams and microstructures developed by solidification and solid-solid phase transformations
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
- Discipline
- Electronics Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 5540500
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1007/BF02651383 
https://dx.doi.org/10.1007/BF02651383
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