A reflection high-energy electron diffraction study of AlAs/GaAs tilted superlattice growth by migration-enhanced epitaxy
- Author
- CHALMERS, S. A; GOSSARD, A. C; PETROFF, P. M; KROEMER, H
Univ. California, dep. electrical computer eng., Santa Barbara CA 93106, United States - Source
Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1990, Vol 8, Num 3, pp 431-435 ; ref : 22 ref
- CODEN
- JVTBD9
- ISSN
- 0734-211X
- Scientific domain
- Electronics; Computer science
- Publisher
- American Institute of Physics, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Aluminium Arséniure Diffraction électron réflexion Gallium Arséniure Superréseau Température
- Keyword (en)
- Aluminium Arsenides Reflection high energy electron diffraction Gallium Arsenides Superlattice Temperature
- Keyword (es)
- Aluminio Arseniuro Difracción electrón reflexión Galio Arseniuro Superred Temperatura
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 5543257
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1116/1.585039 
https://dx.doi.org/10.1116/1.585039
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