Adhesion enhancement of Ni films on polyimide using ion processing. III, Si intermediate layers and 84Kr+ implantation
- Auteur
- GALUSKA, A. A
Sandia National Laboratories, Albuquerque NM 87185, United States - Source
Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1990, Vol 8, Num 3, pp 488-494 ; ref : 15 ref
- CODEN
- JVTBD9
- ISSN
- 0734-211X
- Domaine scientifique
- Electronics; Computer science
- Editeur
- American Institute of Physics, New York, NY
- Pays de publication
- United States
- Type de document
- Article
- Langue
- English
- Mot clé (fr)
- Adhérence Imide polymère Implantation ion Krypton Nickel Silicium Spectrométrie Auger
- Mot clé (en)
- Adhesion Polyimide Ion implantation Krypton Nickel Silicon Auger electron spectrometry
- Mot clé (es)
- Adherencia Imida polímero Implantación ión Kriptón Niquel Silicio Espectrometría Auger
- Classification
- Pascal
- 001 Sciences exactes et technologie / 001D Sciences appliquees / 001D03 Electronique / 001D03C Matériaux
- Discipline
- Electronics
- Provenance
- Inist-CNRS
- Base de données
- PASCAL
- Identifiant INIST
- 5543267
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1116/1.585049 
https://dx.doi.org/10.1116/1.585049
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