Possibility of a new phase transition in 7×7 structure on clean Si(111) surfaces
- Author
- ISHIZAKA, A; DOI, T; ICHIKAWA, M
Hitachi Ltd., cent. res. lab., Tokyo 185, Japan - Source
Applied physics letters. 1991, Vol 58, Num 9, pp 902-904 ; ref : 13 ref
- CODEN
- APPLAB
- ISSN
- 0003-6951
- Scientific domain
- Crystallography; Electronics; Optics; Condensed state physics
- Publisher
- American Institute of Physics, Melville, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Diffraction électron réflexion Dynamique réticulaire Face cristalline Phase cristalline Silicium Structure cristalline Température Transition phase
- Keyword (en)
- Reflection high energy electron diffraction Lattice dynamics Crystal face Crystalline phase Silicon Crystalline structure Temperature Phase transitions
- Keyword (es)
- Difracción electrón reflexión Dinámica reticular Cara cristal Fase cristalina Silicio Estructura cristalina Temperatura Transición fase
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60D Equations of state, phase equilibria, and phase transitions
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 5548938
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1063/1.104471 
https://dx.doi.org/10.1063/1.104471
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