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Photoelectrochemical reactions on semiconductor materials. I: Influence of electrode surface activation on the reduction of oxidants on an n-GaAs electrode

Author
SAVADOGO, O
Ecole polytech. Montréal, dép. métallurgie génie matériaux, Montréal PQ H3C 3A7, Canada
Source

Journal of materials science. 1992, Vol 27, Num 17, pp 4619-4624 ; ref : 28 ref

CODEN
JMTSAS
ISSN
0022-2461
Scientific domain
Chemical industry parachemical industry; Metallurgy, welding; Condensed state physics; Polymers, paint and wood industries
Publisher
Springer, Heidelberg
Publication country
Germany
Document type
Article
Language
English
Keyword (fr)
Conductivité type n Electrode Etude expérimentale Fer III Ion Gallium Arséniure Hydrogène Chlorure Iode Monocristal Photoélectrochimie Réduction chimique Semiconducteur Solution acide Solution aqueuse Composé minéral
Keyword (en)
N type conductivity Electrodes Experimental study Iron III Ions Gallium Arsenides Hydrogen Chlorides Iodine Single crystal Photoelectrochemistry Chemical reduction Semiconductor materials Acidic solution Aqueous solution Inorganic compound
Keyword (es)
Conductividad tipo n Electrodo Estudio experimental Hierro III Ión Galio Arseniuro Hidrógeno Cloruro Iodo Monocristal Fotoelectroquímica Reducción química Semiconductor(material) Solución ácida Solución acuosa Compuesto inorgánico
Classification
Pascal
001 Exact sciences and technology / 001C Chemistry / 001C01 General and physical chemistry / 001C01H Electrochemistry / 001C01H07 Photoelectrochemistry. Electrochemiluminescence

Discipline
General chemistry and physical chemistry
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
5551378

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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