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Photoemission and scanning-tunneling-microscopy study of GaSb(100)

Author
FRANKLIN, G. E; RICH, D. H; SAMSAVAR, A; HIRSCHORN, E. S; LEIBSLE, F. M; MILLER, T; CHIANG, T.-C
Univ. Illinois at Urbana-Champaign, dep. physics, Urbana IL 61801, United States
Source

Physical review. B, Condensed matter. 1990, Vol 41, Num 18, pp 12619-12627 ; ref : 24 ref

CODEN
PRBMDO
ISSN
0163-1829
Scientific domain
Crystallography; Metallurgy, welding; Condensed state physics
Publisher
American Institute of Physics, Woodbury, NY / American Physical Society, Woodbury, NY
Publication country
United States
Document type
Article
Language
English
Keyword (fr)
Bande valence Croissance cristalline Epitaxie Gallium Antimoniure Microscopie tunnel balayage Rayonnement synchrotron Surface
Keyword (en)
Valence band Crystal growth Epitaxy Gallium Antimonides Scanning tunneling microscopy Synchrotron radiation Surface
Keyword (es)
Banda valencia Crecimiento cristalino Epitaxia Galio Antimoniuro Microscopía túnel barrido Radiación sincrotrón Superficie
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H35 Solid surfaces and solid-solid interfaces / 001B60H35B Surface structure and topography

Discipline
Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
5590731

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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