Oscillator strengths of the optical transitions in a semiconductor superlattice under an electric field
- Author
- TRONC, P
Ecole supérieure phyisque chimie industrielles, lab. optique physique, 75231 Paris, France - Source
Journal de physique 1, General physics, statistical physics, condensed matter, cross-disciplinary physics. 1992, Vol 2, Num 4, pp 487-499 ; ref : 10 ref
- Document type
- Article
- Language
- English
- Keyword (fr)
- Champ électrique Etude théorique Exciton Fonction enveloppe Force oscillateur Interaction porteur charge Minibande Semiconducteur Superréseau Théorie perturbation Transition optique
- Keyword (en)
- Electric field Theoretical study Exciton Envelope function Oscillator strength Charge carrier interaction Miniband Semiconductor materials Superlattice Perturbation theory Optical transition
- Keyword (es)
- Campo eléctrico Estudio teórico Excitón Función envolviente Fuerza oscilador Interacción portador carga Minibanda Semiconductor(material) Superred Teoría perturbación Transición óptica
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C20 Surface and interface electron states
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 5614569
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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