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Electrical activity of Al doped silicon Σ 9 bicrystal by S.T.E.B.I.C

Autor
BENABBAS, T; LAVAL, J.-Y
CNRS, lab. physique solide, E.S.P.C.I., Paris 75231, France
Titulo de la conferencia
2nd International workshop on beam injection assessment of defects in semiconductors, Meudon-Bellevue, France, 15-18 July 1991
Nombre de la conferencia
BIADS'91 [Beam injection assessment of defects in semiconductors]. International workshop (2 ; Meudon-Bellevue 1991-07-15)
Autor ( monografía)
SIEBER, B; FARVACQUE, J.-L
CNRS, Paris, France (Funder/Sponsor)
CEA. lab. d'électronique et de technologie de l'informatique, Grenoble, France (Funder/Sponsor)
Centre National d'Etudes des Télécommunications, Issy-les-Moulineaux, France (Funder/Sponsor)
Ministère de la Recherche et de la Technologie, Paris, France (Funder/Sponsor)
Instrumat, France (Funder/Sponsor)
Oxford Instruments, United Kingdom (Funder/Sponsor)
Leica, France (Funder/Sponsor)
Univ. Lille 1, lab. structures propriétés état solide, Villeneuve d'Ascq 59655, France
Fuente

Journal de physique IV. Colloque. 1991, Vol 1, Num 6, pp C6.231-C6.236 ; ref : 12 ref

Tipo de documento
Conference Paper
Idioma
English
Clasificación
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70B Electronic transport in condensed matter / 001B70B20 Conductivity phenomena in semiconductors and insulators

Disciplina
Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Procedencia
Inist-CNRS
Base de datos
PASCAL
Identificador INIST
5615296

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