Role of the Madelung energy in hole conductivity in copper oxides: difference between semiconductors and high-Tc superconductors
- Author
- TORRANCE, J. B1 ; METZGER, R. M
[1] IBM, Almaden res. cent., San Jose CA 95120-6099, United States - Source
Physical review letters. 1989, Vol 63, Num 14, pp 1515-1518 ; ref : 19 ref
- CODEN
- PRLTAO
- ISSN
- 0031-9007
- Scientific domain
- Optics; Atomic molecular physics; Condensed state physics; Physics; Plasma physics
- Publisher
- American Physical Society, Ridge, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Barrière énergie Composé minéral Conductivité électrique Constante Madelung Cuivre Oxyde Etude théorique Lanthanide Composé Métal transition Composé Niveau profond Semiconducteur Supraconducteur haute température Transition supraconductrice Trou Energie Madelung
- Keyword (en)
- Energy barrier Inorganic compound Electrical conductivity Madelung constant Copper Oxides Theoretical study Lanthanide Compounds Transition metal Compounds Deep level Semiconductor materials High temperature superconductor Superconducting transition Hole
- Keyword (es)
- Barrera energía Compuesto inorgánico Conductividad eléctrica Constante Madelung Cobre Estudio teórico Lantánido Metal transición Nivel profundo Semiconductor(material) Supraconductor alta temperatura Transición superconductora Hoyo
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70D Superconductivity / 001B70D25 Properties of type I and type II superconductors
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 6628281
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1103/PhysRevLett.63.1515 
https://dx.doi.org/10.1103/PhysRevLett.63.1515
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