AlInAs-GaInAs HEMT's utilizing low-temperature AlInAs buffers grown by MBE
- Author
- BROWN, A. S1 ; MISHRA, U. K; CHOU, C. S; HOOPER, C. E; MELENDES, M. A; THOMPSON, M; LARSON, L. E; ROSENBAUM, S. E; DELANEY, M. J
[1] Hughes res. lab., Malibu CA 90265, United States - Source
IEEE electron device letters. 1989, Vol 10, Num 12, pp 565-567 ; ref : 11 ref
- CODEN
- EDLEDZ
- ISSN
- 0741-3106
- Scientific domain
- Electronics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Aluminium Indium Arséniure Mixte Basse température Caractéristique courant tension Composé III-V Epitaxie Gallium Indium Arséniure Mixte Jet moléculaire Transistor effet champ Transistor hétérojonction Transistor mobilité électron élevée
- Keyword (en)
- Aluminium Indium Arsenides Mixed Low temperature Voltage current curve III-V compound Epitaxy Gallium Indium Arsenides Mixed Molecular jet Field effect transistor Heterojunction transistor High electron mobility transistor
- Keyword (es)
- Aluminio Baja temperatura Característica corriente tensión Compuesto III-V Epitaxia Galio Chorro molecular Transistor efecto campo Transistor heterounión Transistor movibilidad elevada electrones
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 6680453
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/55.43141 
https://dx.doi.org/10.1109/55.43141
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