Pascal and Francis Bibliographic Databases

Help

Export

Selection :

Permanent link
http://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=6680453

AlInAs-GaInAs HEMT's utilizing low-temperature AlInAs buffers grown by MBE

Author
BROWN, A. S1 ; MISHRA, U. K; CHOU, C. S; HOOPER, C. E; MELENDES, M. A; THOMPSON, M; LARSON, L. E; ROSENBAUM, S. E; DELANEY, M. J
[1] Hughes res. lab., Malibu CA 90265, United States
Source

IEEE electron device letters. 1989, Vol 10, Num 12, pp 565-567 ; ref : 11 ref

CODEN
EDLEDZ
ISSN
0741-3106
Scientific domain
Electronics
Publisher
Institute of Electrical and Electronics Engineers, New York, NY
Publication country
United States
Document type
Article
Language
English
Keyword (fr)
Aluminium Indium Arséniure Mixte Basse température Caractéristique courant tension Composé III-V Epitaxie Gallium Indium Arséniure Mixte Jet moléculaire Transistor effet champ Transistor hétérojonction Transistor mobilité électron élevée
Keyword (en)
Aluminium Indium Arsenides Mixed Low temperature Voltage current curve III-V compound Epitaxy Gallium Indium Arsenides Mixed Molecular jet Field effect transistor Heterojunction transistor High electron mobility transistor
Keyword (es)
Aluminio Baja temperatura Característica corriente tensión Compuesto III-V Epitaxia Galio Chorro molecular Transistor efecto campo Transistor heterounión Transistor movibilidad elevada electrones
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
6680453

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

Access to the document

Searching the Web