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Deep level photodiffractive spectroscopy of semiconductors

Author
NOLTE, D. D1 ; OLSON, D. H; GLASS, A. M
[1] Purdue univ., dep. physics, West Lafayette IN 47907, United States
Source

Applied physics letters. 1990, Vol 56, Num 2, pp 163-165 ; ref : 13 ref

CODEN
APPLAB
ISSN
0003-6951
Scientific domain
Crystallography; Electronics; Optics; Condensed state physics
Publisher
American Institute of Physics, Melville, NY
Publication country
United States
Document type
Article
Language
English
Keyword (fr)
Basse température Chrome Composé minéral Effet photoréfractif Energie activation Etude expérimentale Fer Gallium Arséniure Impureté Indium Phosphure Mélange 4 ondes Méthode mesure Niveau défaut Niveau profond Photochromisme Semiconducteur Température Titane Spectrométrie photodiffractive niveau profond
Keyword (en)
Low temperature Chromium Inorganic compound Photorefractive effect Activation energy Experimental study Iron Gallium Arsenides Impurity Indium Phosphides Four wave mixing Measurement method Defect level Deep level Photochromism Semiconductor materials Temperature Titanium
Keyword (es)
Baja temperatura Cromo Compuesto inorgánico Efecto fotorefractivo Energía activación Estudio experimental Hierro Galio Impureza Indio Mezcla 4 ondas Método medida Nivel profundo Fotocromismo Semiconductor(material) Temperatura Titanio
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70A Electron states / 001B70A55 Impurity and defect levels

Discipline
Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
6718056

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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