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AlGaAs-GaAs and AlGaAs-GaAs-InGaAs vertical cavity surface emitting lasers with Ag mirrors

Author
DEPPE, D. G1 ; CHO, A. Y; HUANG, K. F; FISCHER, R. J; TAI, K; SCHUBERT, E. F; CHEN, J. F
[1] AT & T Bell Laboratories, Murray Hill NJ 07974, United States
Source

Journal of applied physics. 1989, Vol 66, Num 11, pp 5629-5631 ; ref : 11 ref

CODEN
JAPIAU
ISSN
0021-8979
Scientific domain
Crystallography; Electronics; Optics; Condensed state physics; Physics
Publisher
American Institute of Physics, Woodbury, NY
Publication country
United States
Document type
Article
Language
English
Keyword (fr)
Aluminium Gallium Arséniure Mixte Argent Emission Gallium Arséniure Gallium Indium Arséniure Mixte Laser semiconducteur Miroir Surface Cavité verticale
Keyword (en)
Aluminium Gallium Arsenides Mixed Silver Emission Gallium Arsenides Gallium Indium Arsenides Mixed Vertical cavity Semiconductor laser Mirror Surface
Keyword (es)
Aluminio Plata Emisión Galio Galio Laser semiconductor Espejo Superficie
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B40 Fundamental areas of phenomenology (including applications) / 001B40B Optics / 001B40B55 Lasers / 001B40B55P Semiconductor lasers; laser diodes

Discipline
Physics : optics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
6724095

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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