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AlGaSb single, double and multiple heterostructures grown by liquid-phase epitaxy and their photoluminescence properties

Author
ICHIMURA, M1 ; TAKEDA, Y; SASAKI, A
[1] Kyoto univ., dep. electrical eng., Kyoto 606, Japan
Source

Japanese journal of applied physics. 1988, Vol 27, Num 8, pp 1464-1468 ; 1 ; ref : 15 ref

CODEN
JJAPA5
ISSN
0021-4922
Scientific domain
Crystallography; Optics; Condensed state physics; Physics; Plasma physics
Publisher
Japanese journal of applied physics, Tokyo
Publication country
Japan
Document type
Article
Language
English
Keyword (fr)
Aluminium Gallium Antimoniure Mixte Basse température Composé minéral Diffraction RX Diffusion porteur charge Epitaxie Etude expérimentale Haute température Hétérojonction Largeur raie spectrale Méthode phase liquide Photoluminescence Semiconducteur Spectrométrie Auger Support GaAs
Keyword (en)
Aluminium Gallium Antimonides Mixed Low temperature Inorganic compound X ray diffraction Charge carrier scattering Epitaxy Experimental study High temperature Heterojunction Spectral line width Growth from liquid Photoluminescence Semiconductor materials Auger electron spectrometry
Keyword (es)
Aluminio Baja temperatura Compuesto inorgánico Difracción RX Difusión portador carga Epitaxia Estudio experimental Alta temperatura Heterounión Anchura raya espectral Método fase líquida Fotoluminiscencia Semiconductor(material) Espectrometría Auger
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H66 Optical properties of specific thin films

Discipline
Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
6727670

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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