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Comparative study of photorefractive Bi12SiO20 crystals

Author
STROHKENDL, F. P1 ; TAYEBATI, P; HELLWARTH, R. W
[1] Univ. Southern California, dep. elctrical eng. physics, Los Angeles CA 90089-0484, United States
Source

Journal of applied physics. 1989, Vol 66, Num 12, pp 6024-6029 ; ref : 18 ref

CODEN
JAPIAU
ISSN
0021-8979
Scientific domain
Crystallography; Electronics; Optics; Condensed state physics; Physics
Publisher
American Institute of Physics, Woodbury, NY
Publication country
United States
Document type
Article
Language
English
Keyword (fr)
Bande énergie Basse température Bismuth Silicium Oxyde Mixte Coefficient absorption Composé minéral Diffusion porteur charge Eclairement Effet photoréfractif Electron Etude expérimentale Longueur diffusion Niveau défaut Photochromisme Piège Propriété électrooptique Trou Couplage faisceau Déclin obscurité Effacement réseau
Keyword (en)
Energy band Low temperature Bismuth Silicon Oxides Mixed Absorptance Inorganic compound Charge carrier scattering Illumination Photorefractive effect Electrons Experimental study Diffusion length Defect level Photochromism Trap Electrooptical properties Hole
Keyword (es)
Banda energía Baja temperatura Bismuto Coeficiente absorción Compuesto inorgánico Difusión portador carga Alumbrado Efecto fotorefractivo Electrón Estudio experimental Longitud difusión Fotocromismo Trampa Propiedad electroóptica Hoyo
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H20 Optical properties of bulk materials and thin films / 001B70H20J Electrooptical effects

Discipline
Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
6752539

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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