Effects of misfit dislocations and thermally induced strain on the film properties of heteroepitaxial GaAs on Si
- Autor
- LUM, R. M1 ; KLINGERT, J. K; BYLSMA, R. B; GLASS, A. M; MACRANDER, A. T; HARRIS, T. D; LAMONT, M. G
[1] AT&T Bell Laboratories, Holmdel NJ 07733, United States - Fuente
Journal of applied physics. 1988, Vol 64, Num 12, pp 6727-6732 ; ref : 30 ref
- CODEN
- JAPIAU
- ISSN
- 0021-8979
- Campo Científico
- Crystallography; Electronics; Optics; Condensed state physics; Physics
- Editor
- American Institute of Physics, Woodbury, NY
- País de la publicación
- United States
- Tipo de documento
- Article
- Idioma
- English
- Palabra clave (fr)
- Caractéristique capacité tension Composé minéral Concentration porteur charge Contrainte interne Couche épitaxique Diffraction RX Dislocation Etude expérimentale Gallium Arséniure Interface Microscopie électronique balayage Microstructure Photoluminescence Semiconducteur
- Palabra clave (in)
- Voltage capacity curve Inorganic compound Charge carrier concentration Internal stress Epitaxial film X ray diffraction Dislocation Experimental study Gallium Arsenides Interface Scanning electron microscopy Microstructure Photoluminescence Semiconductor materials
- Palabra clave (es)
- Característica capacidad tensión Compuesto inorgánico Concentración portador carga Tensión interna Capa epitáxica Difracción RX Dislocación Estudio experimental Galio Interfase Microscopía electrónica barrido Microestructura Fotoluminiscencia Semiconductor(material)
- Clasificación
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H55 Photoluminescence
- Disciplina
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Procedencia
- Inist-CNRS
- Base de datos
- PASCAL
- Identificador INIST
- 6773831
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1063/1.342004 
https://dx.doi.org/10.1063/1.342004
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