Isolated arsenic-antisite defect in GaAs and the properties of EL2
- Author
- DABROWSKI, J1 ; SCHEFFLER, M
[1] Max-Planck-Gesellschaft, Berlin 1000, Germany - Source
Physical review. B, Condensed matter. 1989, Vol 40, Num 15, pp 10391-10401 ; ref : 61 ref
- CODEN
- PRBMDO
- ISSN
- 0163-1829
- Scientific domain
- Crystallography; Metallurgy, welding; Condensed state physics
- Publisher
- American Institute of Physics, Woodbury, NY
/
American Physical Society, Woodbury, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Absorption IR Approximation densité locale Basse température Composé minéral Densité électron Défaut antisite Eclairement Effet Jahn Teller Etat fondamental Etude théorique Fonctionnelle densité Gallium Arséniure Niveau défaut Paire interstitiel lacune Semiconducteur Simulation numérique Structure électronique Transition métastable Centre EL2
- Keyword (en)
- Infrared absorption Local density approximation Low temperature Inorganic compound Electron density Antisite defect Illumination Jahn Teller effect Ground state Theoretical study Density functional Gallium Arsenides Defect level Interstitial vacancy pair Semiconductor materials Digital simulation Electronic structure Metastable transition
- Keyword (es)
- Absorción IR Aproximación densidad local Baja temperatura Compuesto inorgánico Densidad electrón Defecto antisitio Alumbrado Efecto Jahn Teller Estado fundamental Estudio teórico Funciónal densidad Galio Par intersticial laguna Semiconductor(material) Simulación numérica Estructura electrónica Transición metaestable
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70A Electron states / 001B70A55 Impurity and defect levels
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 6779816
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1103/PhysRevB.40.10391 
https://dx.doi.org/10.1103/PhysRevB.40.10391
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