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Electric properties of Ti―Si―N thin cermet films deposited in a triode sputtering system with a hot cathode

Author
POSADOWSKI, W1
[1] Tech. univ. Wrocław, inst. electron technology, Wrocław 50-372, Poland
Source

Thin solid films. 1988, Vol 162, pp 111-117 ; ref : 9 ref

CODEN
THSFAP
ISSN
0040-6090
Scientific domain
Crystallography; Electronics; Metallurgy, welding; Condensed state physics
Publisher
Elsevier Science, Lausanne
Publication country
Switzerland
Document type
Article
Language
English
Keyword (fr)
Composition chimique Composé minéral Conductivité électrique Couche mince Céramique Etude expérimentale Métal transition Composé Préparation Silicium Titane Nitrure Mixte Température
Keyword (en)
Chemical composition Inorganic compound Electrical conductivity Thin film Ceramic materials Experimental study Transition metal Compounds Preparation Silicon Titanium Nitrides Mixed Temperature
Keyword (es)
Composición química Compuesto inorgánico Conductividad eléctrica Capa fina Cerámica Estudio experimental Metal transición Preparación Silicio Temperatura
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C50 Electronic transport phenomena in thin films and low-dimensional structures

Discipline
Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
6813835

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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