Additional deep level in strongly indium-doped lead tin telluride
- Author
- MOLLMANN, K.-P1
[1] Humboldt-univ. Berlin, bereich exp. halbleiterphysik, Berlin 1086, German Democratic Republic - Source
Physica status solidi. A. Applied research. 1988, Vol 109, Num 2, pp K121-K124 ; ref : 8 ref
- CODEN
- PSSABA
- ISSN
- 0031-8965
- Scientific domain
- Crystallography; Electronics; Metallurgy, welding; Condensed state physics
- Publisher
- Wiley-VCH, Berlin
- Publication country
- Germany
- Document type
- Article
- Language
- English
- Keyword (fr)
- Concentration impureté Effet Hall Etain Plomb Tellurure Mixte Impureté Indium Lacune Niveau défaut Niveau profond Température
- Keyword (en)
- Impurity density Hall effect Tin Lead Tellurides Mixed Impurity Indium Vacancy Defect level Deep level Temperature
- Keyword (es)
- Concentración impureza Efecto Hall Estaño Impureza Indio Cavidad Nivel profundo Temperatura
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70A Electron states / 001B70A55 Impurity and defect levels
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 6848286
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1002/pssa.2211090241 
https://dx.doi.org/10.1002/pssa.2211090241
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