Selective low-power plasma decomposition of silane-methane mixtures for the preparation of methylated amorphous silicon
- Author
- SOLOMON, I1 ; SCHMIDT, M. P; TRAN-QUOC, H
[1] Ecole polytech., Palaiseau 91128, France - Source
Physical review. B, Condensed matter. 1988, Vol 38, Num 14, pp 9895-9901 ; ref : 18 ref
- CODEN
- PRBMDO
- ISSN
- 0163-1829
- Scientific domain
- Crystallography; Metallurgy, welding; Condensed state physics
- Publisher
- American Institute of Physics, Woodbury, NY
/
American Physical Society, Woodbury, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Caractérisation Composition chimique Couche mince Etat amorphe Etude expérimentale Indice réfraction Préparation Pulvérisation cathodique Semiconducteur Système carbone hydrogène silicium
- Keyword (en)
- Characterization Chemical composition Thin film Amorphous state Experimental study Refraction index Preparation Cathodic sputtering Semiconductor materials
- Keyword (es)
- Caracterización Composición química Capa fina Estado amorfo Estudio experimental Indice refracción Preparación Pulverización catódica Semiconductor(material)
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15C Deposition by sputtering
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 6873370
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1103/PhysRevB.38.9895 
https://dx.doi.org/10.1103/PhysRevB.38.9895
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